A low temperature coefficient wide temperature range bandgap reference with high power supply rejection
نویسندگان
چکیده
This paper presents a low temperature coefficient and wide range bandgap reference with high power supply rejection. High curvature compensation of this circuit is accomplished by MOSFET transistors operating in the subthreshold region. With proposed piecewise technique, extended. At same time, pre-regulator structure adopted to improve line sensitivity suppress ripple supply. The novel verified 180nm CMOS process. measured 1.18V at 3.3V voltage, static current 75uA. Over -60∼160◦C, achieves 5.72ppm/◦C, rejection -93.26dB frequency.
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2023
ISSN: ['1349-2543', '1349-9467']
DOI: https://doi.org/10.1587/elex.20.20230104